P4C1026

P4C1026

P4C1026

Pyramid Semiconductor

1M (256Kx4) CMOS SRAM, 5V and 1 CE

The P4C1026/P4C1026L is a 1 Megabit ultra high speed CMOS static RAM organised as 256K x 4. The CMOS memory requires no clock or refreshing and has equal access and cycle times. Inputs and outputs are fully TTL-compatible. The RAM operates from a single 5V±10% tolerance power supply. With battery backup (P4C1026L only), data integrity is maintained for supply voltages down to 2.0V.

Access times as fast as 15 nanoseconds are available, permitting greatly enhanced system speeds. CMOS is utilised to reduce power consumption.

The P4C1026/P4C1026L is available in a 28 pin 300 mil and 400 mil SOJ package, as well as ceramic DIP and LCC packages, providing excellent board level densities.

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More Information
Attribute Value
Key Features
  • Full CMOS, 6T cell
  • High speed (equal access and cycle times)
    • 15/20/25/35 ns (commercial/industrial)
    • 20/25/35 ns (military)

  • Low power
  • Single 5V ±10% power supply
  • Data retention with 2.0V supply (P4C1026L only)
  • Three state outputs
  • TTL/CMOS compatible outputs
  • Fully TTL compatible inputs
  • Standard pinout (JEDEC approved)
    • 28 pin 300 mil SOJ
    • 28 pin 400 mil SOJ
    • 28 pin 400 mil ceramic DIP
    • 32 pin ceramic LCC
Standard Military Drawing Number(s) SMD 5962-91612
TAA (ns) 20/25/35
DIP 28
LCC 32
SOJ 28
Qualified To MIL-STD-883
Size 1M
More Information
Attribute Value
Data Sheet Click here to view

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