3D3D8G32WB1741

The 3D3D8G32WB1741 / 3D3D8G32YB1741 is a high speed stack multi-chip package integrated 4Gbits x 2 DDR3 SDRAM and fabricated with ultra high performance CMOS process containing 8 Gbits which is organised as 32Mbits x 8 banks by 32 bits.

This synchronous device achieves a high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1600) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features: (1) posted CAS by programmable additive latency, (2) On Die Termination (3) programmable driver strength data,(4) clock rate of 1600Mbps. All the control and address inputs are synchronised with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronised with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 8Gb DDR3 devices operates with a single power supply: 1.35V or 1.5V for VDD and VDDQ. This device is ideal for high density memory applications that require high speed transfer and compatibility with standard servers and networking equipment.