3DEE1M08CS1193
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3DEE1M08CS1193

3DEE1M08CS1193

3D Plus

5V, 1 Mbit Memory Module: EEPROM organised as 128K x8

main product photo

The 3DEE1M08CS1193 is a 131,072 words of 8-bits, EEPROM (Electrically Erasable and Programmable ROM) organised as a single bank of 1 Mbit. This module operates at high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technolgy.

The device is manufactured using 3D Plus MCM-V patented technology. The 3DEE1M08CS1193 is packaged in a SOP 40 and is available for Commercial, Industrial or Military temperature range. It is also available with screening options up to space grade level.

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More Information
Attribute Value
Product Type EEPROM
Data_Sheet

To request a datasheet, contact a member of our high-reliability team [email protected]
Memory
Power Supply
Pin Assignment SOP 40 - Pitch 0.50 mm
Temperature Range
  • 0°C to +70°C
  • -40°C to +85°C
  • -55°C to +125°C
Features
  • Access time: 150 ns (Max)
  • On chip latches: address, data, #CE, #OE, #WE
  • Automatic byte write: 10 ms (Max)
  • Automatic page write (128 bytes): 10 ms (Max)
  • Power dissipation:
    • Active: 20 mW/Hz (Typ)
    • Standby: 110 µW (Max)
  • Command/Address/Data Multiplexed I/O Port
  • Data polling and RDY/#BUSY
  • Reliable CMOS with MNOS cell technology
  • 10⁴ erase/write cycles (in page mode)
  • Data Retention: 10 Years
  • Software data protection
  • Write protection by #RES pin
  • Available with screening option for high reliabilityapplications
More Information
Attribute Value
Data Sheet Click here to view

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