3DEE8M32CS8163

3DEE8M32CS8163

3DEE8M32CS8163

3D Plus

5V, 8 Mbit Memory Module: EEPROM organised as 256K x32, based on 128K x8

The 3DEE8M32CS8163 is a 262,144 words of 32-bits. Electrically Erasable and Programmable CMOSROM. It is organised as two banks of 4 Mbit (128K x32). Each bank has 32-bit interface and is selected with specific #CE. All other signals are common to the eight 1 Mbit EEPROM .

Each bank operates at high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. The device is manufactured using 3D PLUS well known MCM-V patented technology. It is particularly well suited for use in high reliability, high performance and high density system applications. The 3DEE8M32CS8163 is packaged in a 64 pins SOP.

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More Information
Attribute Value
Features
  • Access time: 150 ns (Max)
  • On chip latches: address, data, #CE, #OE, #WE
  • Eight decoupling capacitors (100nF) inside the module
  • Automatic byte write: 10 ms (Max)
  • Automatic page write (128 bytes): 10 ms (Max)
  • Power dissipation:
    • Active: 800 mW/Hz (Typ)
    • Standby: 1 mW (Max)
  • Command/Address/Data Multiplexed I/O Port
  • Data polling and RDY/#BUSY
  • Reliable CMOS with MNOS cell technology
  • 10⁴ erase/write cycles (in page mode)
  • Data Retention: 10 Years
  • Software data protection
  • Write protection by #RES pin
  • Available with screening option for high reliabilityapplications
Product Type EEPROM
Memory 8Mb
Power Supply 5V ± 10%
Pin Assignment SOP 64 - Pitch 0.50 mm
Temperature Range
  • 0°C to +70°C
  • -40°C to +85°C
  • -55°C to +125°C
More Information
Attribute Value
Data Sheet Click here to view

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