3DEE2M08CS2097

3DEE2M08CS2097

3DEE2M08CS2097

3D Plus

5V, 2 Mbit Memory Module: EEPROM organised as 256K x8, based on 128K x8

The 3DEE2M08CS2097 is a 262,144 words of 8-bits, EEPROM (Electrically Erasable and Programmable ROM) organised as two banks of 1 Mbit. This module operates at high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technolgy. Each bank has 8-bit interface and is selected with specific #CE. All other signals are common to the two EEPROM 1Mbit.

The device is manufactured using 3D Plus MCM-V patented technology. The 3DEE2M08CS2097 is packaged in a SOP 40 and is available for Commercial, Industrial or Military temperature range. It is also available with screening options up to space grade level.

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More Information
Attribute Value
Product Type EEPROM
Data_Sheet

To request a datasheet, contact a member of our high-reliability team [email protected]

Memory
Power Supply
Pin Assignment SOP 40 - Pitch 0.50 mm
Temperature Range
  • 0°C to +70°C
  • -40°C to +85°C
  • -55°C to +125°C
Features
  • Access time: 150 ns (Max)
  • On chip latches: address, data, #CE, #OE, #WE
  • Automatic byte write: 10 ms (Max)
  • Automatic page write (128 bytes): 10 ms (Max)
  • Power dissipation:
    • Active: 20 mW/Hz (Typ)
    • Standby: 0.2 mW (Max)
  • Command/Address/Data Multiplexed I/O Port
  • Data polling and RDY/#BUSY
  • Reliable CMOS with MNOS cell technology
  • 10⁴ erase/write cycles (in page mode)
  • Data Retention: 10 Years
  • Software data protection
  • Write protection by #RES pin
  • Available with screening option for high reliabilityapplications
More Information
Attribute Value
Data Sheet Click here to view

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