3DMR8M32VS8420

3DMR8M32VS8420

3DMR8M32VS8420

3D Plus

3.3V, 8 Mbit Memory Module: 32-bit bus width, MRAM based on 128K

The Magneto-resistive Random Access Memory (MRAM) uses magnetic polarisation rather than electric charges to store data bits. Therefore, the MRAM acts like a SRAM (rapid data buffers) while being non-volatile like a Flash. The 3DMR8M32VS8420 is a high-speed, highly integrated 8 Mbit MRAM, organised with two banks of 4 Mbit. Each bank has an 32-bit interface and can be accessed by activating the associated control signals: #WE, #OE and #CEn (n from 0 to 1).

This MRAM is a cost-effective solution for processor's boot, program ROM and FPGA configuration memory. It can be used in variety of space applications such as: sciences and deep space missions, navigation, launchers and manned vehicles, etc. The module packaged in a SOP 68 is available for Commercial, Industrial or Specific temperature range. It is also available with screening options up to space grade level.

Contact us for lead time

Click below to request a quote for this item. Or for product advice, stock and lead time enquiries call our team on 0330 313 3220.

More Information
Attribute Value
Features
  • Memory Cell Array 2 x (128k x 32 bits)
  • Symmetrical high-speed read and write fast access: 35 ns
  • Fully static operation (no clock or refresh required)
  • SRAM compatible
  • Reliable CMOS Floating-Gate Technology
    • Endurance: unlimited read/write operation
    • Data Retention: > 10 Years
  • SEU immune
  • Available with screening up to Space grade
Product Type MRAM
Memory 8Mb
Power Supply Single 3.3 V power supply
Pin Assignment SOP 68 - Pitch 0.80 nm
Temperature Range
  • 0°C to +70°C
  • -40°C to +85°C
  • -55°C to +125°C
More Information
Attribute Value
Data Sheet Click here to view

Related Products

  1. 3DSD2G16VS4767
  2. 3DEE8M32VS8094
  3. 3DSR16M16CS4512
  4. 3DPO64M08VS2299
  5. 3DSR4M08VS1520