3DEE2M08VS2154

3DEE2M08VS2154

3DEE2M08VS2154

3D Plus

3.3V, 2 Mbit Memory Module: 8-bit bus width, EEPROM based on 128K x8

The 3DEE2M08VS2154 is 2 Mbit EEPROM (Electrically Erasable and Programmable ROM) organised as two banks of 1 Mbit each. Each bank has 8-bit interface and is selected wit a specific #CEn (n from 0 to 1). Using high performance and high reliability CMOS technology combined with 3D PLUS patented stacking technology, this EEPROM memory is well suited for use in high reliability, high performance system applications. The module packaged in a SOP 40 is available for Commercial, Industrial or Military temperature range. It is also available with screening options up to space grade level.

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More Information
Attribute Value
Features
  • Memory Cell Array 2x (128K x8 bits)
  • Access time: 250 ns (Max)
  • On chip latches: address, data, #CEn, #OE, #WE
  • Automatic byte write: 15 ms (Max)
  • Automatic page write (128 bytes): 15 ms (Max)
  • Power dissipation:
    • Active: 20 mW/Hz (Typ)
    • Standby: < 200 µW (Max)
  • Command/Address/Data Multiplexed I/O Port
  • Data polling and RDY/#BUSY
  • Endurance: 100k Program/Erase Cycles with ECC
  • Data Retention: 10 Years
  • Software data protection
  • Write protection by #RES pin
  • Available with screening options up to grade S
  • ITAR free
Product Type EEPROM
Memory 2Mb
Power Supply Single 3.3 V power supply
Pin Assignment SOP 40 - Pitch 0.50 mm
Temperature Range
  • 0°C to +70°C
  • -40°C to +85°C
  • -55°C to +125°C
More Information
Attribute Value
Data Sheet Click here to view

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