3DMR8M08VS8666
3DMR8M08VS8666
3D Plus
3.3V, 8 Mbit Memory Module: 8-bit bus width, MRAM based on 128K
The Magneto-resistive Random Access Memory (MRAM) uses magnetic polarisation rather than electric charges to store data bits. Therefore, the MRAM acts like a SRAM (rapid data buffers) while being non-volatile like a Flash. The 3DMR8M08VS8666 is a high-speed, highly integrated 8 Mbit MRAM, organised with eight banks of 1 Mbit. Each bank has an 8-bit interface and can be accessed by activating the associated control signals: #WE, #OE and #CSn (n from 0 to 7).
This MRAM is a cost-effective solution for processor's boot, program ROM and FPGA configuration memory. It can be used in variety of space applications such as: sciences and deep space missions, navigation, launchers and manned vehicles, etc. The module packaged in a SOP 44 is available for Commercial, Industrial or Specific temperature range. It is also available with screening options up to space grade level.
Click below to request a quote for this item. Or for product advice, stock and lead time enquiries call our team on 0330 313 3220.
| Attribute | Value |
|---|---|
| Product Type | MRAM |
| Data_Sheet |
To request a datasheet, contact a member of our high-reliability team [email protected] |
| Memory | |
| Power Supply | |
| Pin Assignment | SOP 44 - Pitch 0.80 nm |
| Temperature Range |
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| Features |
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| Attribute | Value |
|---|---|
| Data Sheet | Click here to view |
