3DSD2G16VS4767

3DSD2G16VS4767

3DSD2G16VS4767

3D Plus

3.3 V, 2 Gbit SDRAM organised as 128M x16, based on 64M x8

The 3DSD2G16VS4767 is a high-speed highly integrated Synchronous Dynamic Random Access Memory containing 2,147,483,648 bits. It is organised with 2 banks of 1 Gbit each. Each bank has a 16-bit interface and is selected with specific #CS. It is particularity well suited for use in high reliability, high performance and high density system applications, such as solid state mass recorder, server or workstation. The 3DSD2G16VS4767 is packaged in a 54 pin SOP.

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More Information
Attribute Value
Features
  • Fully synchronous; all signals registered on positive edge of system clock
  • Internal pipelined operation; column address can be changed every clock cycle.
  • Programmable burst length; 1, 2, 4, 8 or full page
  • Auto precharge includes concurrent auto precharge, and auto refresh modes
  • Self refresh modes
  • LVTTL-compatible inputs and outputs
  • Available with screening option for high reliability application (Space, etc…)
Product Type SDRAM
Memory 2Gb
Power Supply Single 3.3 V power supply
Pin Assignment SOP 54 - Pitch 0.80mm
Temperature Range
  • 0°C to +70°C
  • -40°C to +85°C
  • Specific temperature range on demand
More Information
Attribute Value
Data Sheet Click here to view

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