Search results for: '2015 5 5 20 5 20 10'

3DEE8M32CS8163

5V, 8 Mbit Memory Module: EEPROM organised as 256K x32, based on 128K x8

3D5R20M40V52708

5V, 20 Mbit SRAM organised as 512K x 40 based on 256K x 16

3DMR10M40VS5688

3.3V, 10 Mbit Memory Module: 40-bit bus width, MRAM based on 128K

3DPM0211

Space Qualified Point-Of-Load DC/DC Converter, 5V ± 10% Input, 1.225V to 3.8V adjustable Output, Radiation Hardened Design

P4C167

16K (16Kx1) CMOS SRAM

ERZ-LNA-3000-4000-20-2.5

Ka Band Low Noise Amplifier

ERZ-LNA-0070-0300-20-0.7

L Band Low Noise Amplifier

ERZ-LNA-0100-0200-10-7

L Band Low Noise Amplifier

ERZ-LNA-0100-0200-20-1.5

L Band Low Noise Amplifier

BT0710-50-P

Bias Tee (0.7 - 10 GHz)