3DFN64G16VS8710

3DFN64G16VS8710

3DFN64G16VS8710

3D Plus

3.3V, 64 Gbit Memory Module: 16-bit bus width, NAND Flash based on 1G x 8

The 3DFN64G16VS8710 is a high-density non-volatile NAND Flash memory is organised as 4G x16. Each device of the module is a 8 Gbit NAND Flash organised as 1G x 8 bits, that can be accessed by activating the associated control signals: #CEn, #WEn, #REn, #RBn (n = 0 to 7).

Using high performance and high reliability CMOS technology combined with 3D PLUS patented stacking technology, this FLASH memory module provides an area efficient solution for high capacity data storage needs. The module packaged in a SOP 58 is available for Commercial, Industrial or Military temperature range. It is also available with screening options up to space grade level.

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More Information
Attribute Value
Product Type NAND FLASH
Data_Sheet

To request a datasheet, contact a member of our high-reliability team [email protected]

Memory
Power Supply
Pin Assignment SOP 58 - Pitch 0.50 mm
Temperature Range
  • 0°C to +70°C
  • -40°C to +85°C
  • -55°C to +125°C
Features
  • ONFI 2.1 compliant
  • Memory Cell Array 4x (1G x 16 bits)
  • Automatic Program and Erase
    • Page size x 8 bit Program: (4K+224) Byte/Bank
    • Block Size: (512K+28K) Byte/Bank
  • Page Read performance
    • Random READ: 25 µs (Max)
    • Serial Access: 25 ns (Min)
  • Fast Write cycle time
    • Page Program Time: 230 µs (Typ)
    • Block Erase Time: 700 µs (Typ)
  • Command/Address/Data Multiplexed I/O Port
  • Hardware Data Protection
    • Program/Erase Lockout during Power Transitions
  • Endurance: 100k Program/Erase Cycles with ECC
  • Data Retention: 10 Years
  • Command Driven Operation
  • Intelligent Copy-Back Operation
  • Available with screening options up to grade S
  • ITAR free
More Information
Attribute Value
Data Sheet Click here to view

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