3DMR1M08VS1426

3DMR1M08VS1426

3DMR1M08VS1426

3D Plus

3.3V, 1 Mbit Memory Module: 8-bit bus width, MRAM based on 128K

The Magneto-resistive Random Access Memory (MRAM) uses magnetic polarisation rather than electric charges to store data bits. Therefore, the MRAM acts like a SRAM (rapid data buffers) while being non-volatile like a Flash. The 3DMR1M08VS1426 is a high-speed, highly integrated 1 Mbit MRAM with a 8-bit interface. The 1 Mbit bank can be accessed by activating the associated control signals: #WE, #CE, #OE.

This MRAM is a cost-effective solution for processor's boot, program ROM and FPGA configuration memory. It can be used in variety of space applications such as: sciences and deep space missions, navigation, launchers and manned vehicles, etc. The module packaged in a SOP 44 is available for Commercial, Industrial or Specific temperature range. It is also available with screening options up to space grade level.

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More Information
Attribute Value
Product Type MRAM
Data_Sheet

To request a datasheet, contact a member of our high-reliability team [email protected]

Memory
Power Supply
Pin Assignment SOP 44 - Pitch 0.80 nm
Temperature Range
  • 0°C to +70°C
  • -40°C to +85°C
  • -55°C to +125°C
Features
  • Memory Cell Array 1 x (128k x 8 bits)
  • Symmetrical high-speed read and write fast access: 35 ns
  • Fully static operation (no clock or refresh required)
  • SRAM compatible
  • Reliable CMOS Floating-Gate Technology
    • Endurance: unlimited read/write operation
    • Data Retention: > 10 Years
  • SEU immune
  • Available with screening up to Space grade
More Information
Attribute Value
Data Sheet Click here to view

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