3DFN16G08VS1712

3DFN16G08VS1712

3DFN16G08VS1712

3D Plus

3.3V, 16 Gbit Memory Module: 8-bit bus width, NAND Flash based on 2G x 8

The 3DFN16G08VS1712 is a high-density non-volatile NAND Flash memory is organised as 2G x8. The module can be accessed by activating the associated control signals: #CE, #WE, #RE, #RB. Using high performance and high reliability CMOS technology combined with 3D PLUS patented stacking technology, this FLASH memory module provides an area efficient solution for high capacity data storage needs. The module packaged in a SOP 50 is available for Commercial, Industrial or Military temperature range. It is also available with screening options up to space grade level.

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More Information
Attribute Value
Features
  • ONFI 2.1 compliant
  • Memory Cell Array 2G x 8 bits
  • Automatic Program and Erase
    • Page size x 8 bit Program: (4K+224) Byte/Bank
    • Block Size: (512K+28K) Byte/Bank
  • Page Read performance
    • Random READ: 25 µs (Max)
    • Serial Access: 25 ns (Min)
  • Fast Write cycle time
    • Page Program Time: 230 µs (Typ)
    • Block Erase Time: 700 µs (Typ)
  • Command/Address/Data Multiplexed I/O Port
  • Hardware Data Protection
    • Program/Erase Lockout during Power Transitions
  • Endurance: 100k Program/Erase Cycles with ECC
  • Data Retention: 10 Years
  • Command Driven Operation
  • Intelligent Copy-Back Operation
  • Available with screening options up to grade S
  • ITAR free
Product Type NAND FLASH
Memory 16Gb
Power Supply Single 3.3 V power supply
Pin Assignment SOP 50 - Pitch 0.50 mm
Temperature Range
  • 0°C to +70°C
  • -40°C to +85°C
  • -55°C to +125°C
More Information
Attribute Value
Data Sheet Click here to view

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